Growth method	Horizontal Bridgman and Vertical Bridgman
Conductivity	N or P type
Orientation	(100), and off oriented ± .5 degree Other orientations and tolerance to ± .1 degree available on request
Wafer Diameter	2.000 ± 0.015 3.000 ± 0.025 inches Other diameters available on request
Wafer Thickness	400 ± 25 500 ± 25 microns Other thicknesses to 250 microns available on request
Rectangular Wafer Sizes	25 mm x 45 mm (+0, - 1 mm) 38 mm x 45 mm (+0, - 1 mm) 45 mm x 45 mm (+0, - 1 mm) 52 mm x 57 mm (+0.6, - 0.4 mm) All rectangular wafers sized with (110) cleavage plane parallel to wafer sides.
Surface	As Cut* Polished one side etched back side Polished both sides
Etch Pit Density Ranges	£ 2,000 £ 5,000 £ 10,000 > 10,000 cm-²
Carrier Concentration	N = 5 x 1016 – 4 x 1018 cm-³ P = 6 x 1017 – 3 x 1019 cm-³
Mobility	N = 1,200 – 2.400 cm² / v-sec P = 40 – 100 cm² / v-sec
Resistivity	N = 1.1 – 15.0 x 10-³ ohm-cm P = 0.8 – 12.0 x 10-² ohm-cm