Silicon Carbide ( SiC )

Crystal properties

Crystal Type

6H-SiC

Formular weight

40.10

Unit cell and constant

Hexagonal
a = 3.073 Angstrom,
c = 15.117 Angstrom

Stacking sequence

ABCACB ( 6H )

on axis (0001)

+/- 4 minutes

Type

N - type

Nd – Na^.

Nd - Na = 5 X 10¹⁵ to 1 x 10¹⁹ / cm³
Nd = Number density of electron donors
Na = Number density of electron acceptors (holes)
Nd - Na = Net Carrier Concentration

Resistivity

0.06 +/- 0.02 Ohm-cm

Micro-pipe Density^.

~200 / cm²

Polish

One side (Si-face) polished, back side Carbon face

Band Gap

2.93 eV (Indirect)

Dielectric Constant

ƒÃ(11) = ƒÃ(22) = 9.66, ƒÃ(33) = 10.33

Thermal Conductivity at 300K

5 W / cm.K

Growth method

Seeded Crystal –
Vapor Phase Transport
Modified Lally Process

Size

Up to 4 inch

Crystal Type

4H-SiC

Unit cell and constant

Hexagonal
a = 3.076 Angstrom
c = 10.053 Angstrom

Stacking sequence

ABAC ( 4H )

on axis (0001)

+/- 0.5°

Type

N - type

Polish

One side (Si-face) polished

Size

Up to 4”