Silicon Carbide ( SiC )
Crystal properties |
|
|
Crystal Type |
6H-SiC |
|
Formular weight |
40.10 |
|
Unit cell and constant |
Hexagonal |
|
Stacking sequence |
ABCACB ( 6H ) |
|
on axis (0001) |
+/- 4 minutes |
|
Type |
N - type |
|
Nd – Na. |
Nd - Na = 5 X 1015 to 1 x 1019 / cm3 |
|
Resistivity |
0.06 +/- 0.02 Ohm-cm |
|
Micro-pipe Density. |
~200 / cm2 |
|
Polish |
One side (Si-face) polished, back side Carbon face |
|
Band Gap |
2.93 eV (Indirect) |
|
Dielectric Constant |
ƒÃ(11) = ƒÃ(22) = 9.66, ƒÃ(33) = 10.33 |
|
Thermal Conductivity at 300K |
5 W / cm.K |
|
Growth method |
Seeded Crystal – |
|
Size |
Up to 4 inch |
|
Crystal Type |
4H-SiC |
|
Unit cell and constant |
Hexagonal |
|
Stacking sequence |
ABAC ( 4H ) |
|
on axis (0001) |
+/- 0.5° |
|
Type |
N - type |
|
Polish |
One side (Si-face) polished |
|
Size |
Up to 4” |