Orientation	<100> ± 20'
	<111> ± 20'
	4 ÷ 6° off <100> towards <110>
Diameter	51 ± 0,5 mm
Thickness	375 ± 20 mm
	400 ± 20 mm
Dislocation density (EPD)	< 1*105 cm-2
Carrier concentration	3,5*1017 ÷ 2*1018 cm-3
Dopant	S or Te	Galium Phosphide VGF crystal

GaP Wafers
Diam.	Type	Orient.	C.C.	EPD	Thickness	Surface	Grade
2"	P/Zn	(100)	1-2x10E18	1-2x10E5	300 mic.	2-SIDE	EPI
2"	Undoped	(100)	<1x10E16	<2x10E5	300 mic.	2-SIDE	EPI
2"	N/S	(100)	1-2x10E18	<2x10E5	300 mic.	2-SIDE	EPI
2" Optical	Undoped	(100)	<1x10E16		300 mic.	2-SIDE	EPI
2" Electronic	Undoped	(100)	<1x10E16		300 mic.	2-SIDE	EPI
2" Optical	Undoped	(100)	<1x10E16		300 mic.	2-SIDE	EPI