Indium Arsenide (InAs)
| Crystal properties | ||
| Orientation | (100) (110) (111) +/- 0.5° with orientation flat |
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| Crystal structure | zinc blende | |
| Lattice constant | 6.058 Å | |
| Growth method | LEC | |
| Dopant | None | |
| Type | N-type | |
| Carrier concentration | < 3E16 / cm3 | |
| Mobility | > 2E4 cm2 / VS | |
| EPD | < 5E4 / cm2 | |
| Melting Point | 1215°C | |
| Density | 5.66 g/cm3 | |
| Size | 30 mm?F X 500 +/- 20 ?mT wafer | |
| Polish | one side EPI polished | |
| InAs Wafers | |||||||
| Diam. | Type | Orient. | C.C. | EPD | Thickness | Surface | Grade |
| 2" | Zn/P | (100) | 450 mic. | 1-SIDE | EPI | ||
| 2" | Zn/P | (100) | 450 mic. | 1-SIDE | EPI | ||
| 2" | S/N | (100) | 450 mic. | 1-SIDE | EPI | ||
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