Indium Arsenide (InAs)
Crystal properties | ||
Orientation | (100) (110) (111) +/- 0.5° with orientation flat |
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Crystal structure | zinc blende | |
Lattice constant | 6.058 Å | |
Growth method | LEC | |
Dopant | None | |
Type | N-type | |
Carrier concentration | < 3E16 / cm3 | |
Mobility | > 2E4 cm2 / VS | |
EPD | < 5E4 / cm2 | |
Melting Point | 1215°C | |
Density | 5.66 g/cm3 | |
Size | 30 mm?F X 500 +/- 20 ?mT wafer | |
Polish | one side EPI polished |
InAs Wafers | |||||||
Diam. | Type | Orient. | C.C. | EPD | Thickness | Surface | Grade |
2" | Zn/P | (100) | 450 mic. | 1-SIDE | EPI | ||
2" | Zn/P | (100) | 450 mic. | 1-SIDE | EPI | ||
2" | S/N | (100) | 450 mic. | 1-SIDE | EPI |
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