Crystal properties
Density	5.74 g/cm3
Space Group	32
SAW velocity (Vef)	m/s = 2736
Electromechanical coupling coefficient	K²s = 0,38
Temperature coefficient first order: second order	TCD a1 = 0 TCD a2 = -6,8*10^-8 (1/C°)^2
Working face	wafer diameter minus 3 mm
Orientation	Primary flat is perpendicular to X' axis with accuracy +/-15 min Yxlt/48.5°/26.6°
Edge chipping	No chipping inside the working area and on the primary flat. Chipping can be accepted outside the working area if the width is less than 0.5 mm, and the cumulative length is less than 5 mm.
Polishing	No dimples, cracks, unpolished areas, ontaminants in working area under x50 magnification. Scratches visible at x50 magnification are allowed in working area if their quantity is lower than 3 on one wafer and less than 20 in a lot of one hundred wafers.
Backside face	Ra>0.2 microns.
	76,2 mm wafers	100 mm wafers
Diameter	76.2 mm +/- 0.2 mm	100.0 mm +/- 0.15 mm
Thickness	0.50 mm +/- 0.05 mm	0.50 mm +/- 0.05 mm
Primary flat	22 mm +/-2.0 mm	32.5 mm +/-2.5 mm
Flatness (under vacuum)	< 10 mm	< 10 mm
LTV	<2.2 microns for the base 20 mm x20mm	<2.2 microns or the base 20 mm x20mm
Bow (free wafer)	< 50 mm	< 50 mm
Secondary flat	11 mm +/-2.0 mm	11 mm +/-2.0 mm