Silicon Carbide (SiC)
Crystal properties |
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Crystal Type | 6H-SiC | |
Formular weight | 40.10 | |
Unit cell and constant | Hexagonal a = 3.073 Angstrom, c = 15.117 Angstrom |
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Stacking sequence | ABCACB ( 6H ) | |
on axis (0001) | +/- 4 minutes | |
Type | N - type | |
Nd – Na. | Nd - Na = 5 X 1015 to 1 x 1019 / cm3 Nd = Number density of electron donors Na = Number density of electron acceptors (holes) Nd - Na = Net Carrier Concentration |
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Resistivity | 0.06 +/- 0.02 Ohm-cm | |
Micro-pipe Density. | ~200 / cm2 | |
Polish | One side (Si-face) polished, back side Carbon face | |
Band Gap | 2.93 eV (Indirect) | |
Dielectric Constant | ƒÃ(11) = ƒÃ(22) = 9.66, ƒÃ(33) = 10.33 | |
Thermal Conductivity at 300K | 5 W / cm.K | |
Growth method | Seeded Crystal – Vapor Phase Transport Modified Lally Process |
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Size | Up to 4 inch | |
Crystal Type | 4H-SiC | |
Unit cell and constant | Hexagonal a = 3.076 Angstrom c = 10.053 Angstrom |
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Stacking sequence | ABAC (4H) | |
on axis (0001) | +/- 0.5° | |
Type | N - type | |
Polish | One side (Si-face) polished | |
Size | Up to 4” |
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