Crystal properties
Crystal Type	6H-SiC
Formular weight	40.10
Unit cell and constant	Hexagonal a = 3.073 Angstrom, c = 15.117 Angstrom
Stacking sequence	ABCACB ( 6H )
on axis (0001)	+/- 4 minutes
Type	N - type
Nd – Na.	Nd - Na = 5 X 1015 to 1 x 1019 / cm3 Nd = Number density of electron donors Na = Number density of electron acceptors (holes) Nd - Na = Net Carrier Concentration
Resistivity	0.06 +/- 0.02 Ohm-cm
Micro-pipe Density.	~200 / cm2
Polish	One side (Si-face) polished, back side Carbon face
Band Gap	2.93 eV (Indirect)
Dielectric Constant	ƒÃ(11) = ƒÃ(22) = 9.66, ƒÃ(33) = 10.33
Thermal Conductivity at 300K	5 W / cm.K
Growth method	Seeded Crystal – Vapor Phase Transport Modified Lally Process
Size	Up to 4 inch
Crystal Type	4H-SiC
Unit cell and constant	Hexagonal a = 3.076 Angstrom c = 10.053 Angstrom
Stacking sequence	ABAC (4H)
on axis (0001)	+/- 0.5°
Type	N - type
Polish	One side (Si-face) polished
Size	Up to 4”