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Stock List Crystals & Substrates

Stock List Targets

Orientation

 <100> ± 20'  

<111> ± 20'  

 4 ÷ 6° off <100> towards <110> 

Diameter 

51 ± 0,5 mm 

Thickness  

375 ± 20 mm 

400 ± 20 mm 

Dislocation  density (EPD) 

< 1*10⁵ cm^-2 

Carrier  concentration 

3,5*10¹⁷ ÷ 2*10¹⁸ cm^-3

Dopant 

S or Te 

Galium Phosphide VGF crystal

GaP Wafers

Diam.

Type

Orient.

C.C.

EPD

Thickness

Surface

Grade

2"

P/Zn

(100)

1-2x10E18

1-2x10E5

300 mic.

2-SIDE

EPI

2"

Undoped

(100)

<1x10E16

<2x10E5

300 mic.

2-SIDE

EPI

2"

N/S

(100)

1-2x10E18

<2x10E5

300 mic.

2-SIDE

EPI

2" Optical

Undoped

(100)

<1x10E16

300 mic.

2-SIDE

EPI

2" Electronic

Undoped

(100)

<1x10E16

300 mic.

2-SIDE

EPI

2" Optical

Undoped

(100)

<1x10E16

300 mic.

2-SIDE

EPI

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