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Indium Arsenide ( InAs )
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Crystal properties
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Orientation
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(100) (110) (111) +/- 0.5°
with orientation flat
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Crystal structure
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zinc blende
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Lattice constant
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6.058 Å
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Growth method
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LEC
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Dopant
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None
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Type
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N-type
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Carrier concentration
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< 3E16 / cm3
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Mobility
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> 2E4 cm2 / VS
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EPD
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< 5E4 / cm2
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Melting Point
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1215°C
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Density
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5.66 g/cm3
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Size
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30 mmΦF X 500 +/- 20 μmT wafer
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Polish
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one side EPI polished
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InAs Wafers
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Diam.
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Type
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Orient.
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C.C.
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EPD
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Thickness
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Surface
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Grade
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2"
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Zn/P
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(100)
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450 mic.
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1-SIDE
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EPI
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2"
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Zn/P
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(100)
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450 mic.
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1-SIDE
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EPI
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2"
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S/N
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(100)
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450 mic.
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1-SIDE
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EPI
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 Up
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