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Crystal properties
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Orientation
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Size
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Polish
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(0,0,0,1)
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10*10*1mm3
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Both sides
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(1,1,-2,0)
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10*10*1mm3
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Both sides
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(1,-1,0,0)
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10*10*1mm3
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Both sides
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Growth method
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Seeded Vapor-Phase Free Growth Technology
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Structure
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hexagonal
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Lattice Parameters
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a = 4.1369Å
c = 6.7161Å
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Growth Direction
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<0001>
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Standard orientations
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(0,0,0,1) (1,1,-2,0) (1,-1,0,0) (1,1,-2,0)
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is widely used as substrate for epitaxial growth.
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Specific Resistivity
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1... 1 x 1010 Ohm cm
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Hall Mobility
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650(e) cm2/ V x sec
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EPD
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< 5 x 105/cm2
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Polishing
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one side or both sides mechanically polished
If you wish to use these substrates for epitaxial growth,
it is necessary to do chemical treating before epi-growth at your side.
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Standard size
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10 x 10 x 1 mm3
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Max ingot diameter
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40mm
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 Up
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