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Indium Phosphide ( InP )
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Crystal properties
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Crystal Type
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cubic, a = 5.868A
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Orientation
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(100)
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Growth method
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LEC
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Resistivity
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0.03-0.2 Ohm cm
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Type
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N-type
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Undoped
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Mobility
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3700 - 4000 cm2/ V-S
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EPD
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< 5 x 1014 /cm2
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Carrier concentration
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< = 1017 / cm3
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Melting Point
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1330°C
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Size
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10 X 10 X 0.5mm3
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Polish
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1 side or 2 side
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Orientation
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(111)
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Growth method
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LEC
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Type
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N-type
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Undoped
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Mobility
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< 3000 cm2/ V-S
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Carrier concentration
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< 3 X 1016 / cm3
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Size
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10 X 10 X 0.5mm3
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Polish
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1 side, B-face
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InP Wafers
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Diam.
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Type
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Orient.
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C.C.
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EPD
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Thickness
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Surface
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Grade
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2"
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Fe/SI
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(100)
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R>10E7
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<10E5
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500 mic.
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1-SIDE
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EPI
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2"
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Fe/SI
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(100)
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R>10E7
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<10E5
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500 mic.
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2-SIDE
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EPI
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2"
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S/N
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(100)
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R>10E18
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<10E5
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450 mic.
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1-SIDE
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EPI
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 Up
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