|
|
 |
|
|
Zinc Selenide (ZnSe)
|
|
|
|
|
 
|
|
Crystal properties
|
|
Crystal growth method
|
Seeded Vapor-Phase Free Growth Technology
|
|
Orientation
|
(100) (110) (111) +/- 0.5°
|
|
Crystal structure
|
cubic, a = 5.6687Å
|
|
Growth direction
|
<111> or <100>
|
|
Specific resistivity
|
1 X 108 ... 1 X 1012 Ohm cm ( undoped )
|
|
Hall mobility
|
400 (e) cm2 / V / sec.
|
|
EPD
|
5 X 103 / cm2 ... 1 X 105 / cm2
|
|
Twin
|
Twin free
|
|
Orientation
|
Size
|
Polish
|
|
ZnSe(100)
|
10 x 10 x 1mm3
|
Both sides
|
|
ZnSe(110)
|
10 x 10 x 1mm3
|
Both sides
|
|
ZnSe (111)
|
10 x 10 x 1mm3
|
Both sides
|
|
|
|
List of Optical Crystals
|
|
Materials
|
Refractive Index
|
Transmission
Range (mm)
|
Density
(g/cm³)
|
Thermal Expansion
Coefficient (10-6/K)
|
|
BK7 glass
|
1.5164 (588 nm)
|
0.330 – 2.1
|
2.51
|
7.5
|
|
SF11 glass
|
1.78472 (588 nm)
|
0.370 – 2.5
|
4.74
|
6.8
|
|
F2 glass
|
1.62004 (588 nm)
|
0.420 – 2.0
|
3.61
|
8.2
|
|
Fused Silica
|
1.4858 (308 nm)
|
0.185 – 2.5
|
2.20
|
0.55
|
|
CaF2
|
1.399 (5.0 mm)
|
0.170 – 7.8
|
3.18
|
18.85
|
|
BaF2
|
1.460 (3.0 um)
|
0.15 – 12.0
|
4.88
|
18.4
|
|
Sapphire
|
1.755 (1.0mm)
|
0.180 – 4.5
|
3.98
|
8.4
|
|
Silicon
|
3.4179 (10mm)
|
1.200 – 7.0
|
2.33
|
4.15
|
|
Ge
|
4.003 (10 mm)
|
1.900 – 16
|
5.33
|
6.1
|
|
ZnSe
|
2.40 (10 mm)
|
0.630 – 18
|
5.27
|
7.8
|
|
ZnS
|
2.2 (10mm)
|
0.380 –14
|
4.09
|
6.5
|
|
LiF
|
1.39 (500 nm)
|
0.150 – 5.2
|
2.64
|
37
|
|
KBr
|
1.526 (10 mm)
|
0.280 – 22
|
2.75
|
43
|
|
MgF2
|
no = 1.3836 ne = 1.3957 (405 nm)
|
0.130 – 7.0
|
7.37
|
a: 13.7 b: 8.48
|
|
YVO4
|
no = 1.9500 ne = 2.1554 (1.3 mm)
|
0.400 – 5.0
|
4.22
|
a: 4.46 b: 11.37
|
|
Calcite
|
no = 1.6557 ne = 1.4852 (633 nm)
|
0.210 – 2.3
|
2.75
|
a: 24.39 b: 5.68
|
|
Quartz
|
no = 1.5427 ne = 1.5518 (633 nm)
|
0.200 – 2.3
|
2.65
|
7.07
|
|
α-BBO
|
no = 1.6749 ne = 1.5555 (532 nm)
|
0.190 – 3.5
|
3.85
|
a: 4.0 c: 36
|
|
LiNbO3
|
no = 2.2863 ne = 2.2027 (633 nm)
|
0.370 – 4.5
|
4.64
|
a: 16.7 c: 2.0
|
|
 Up
|
|
|
