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Crystal properties
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Crystal Type
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6H-SiC
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Formular weight
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40.10
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Unit cell and constant
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Hexagonal
a = 3.073 Angstrom,
c = 15.117 Angstrom
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Stacking sequence
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ABCACB ( 6H )
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on axis (0001)
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+/- 4 minutes
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Type
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N - type
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Nd – Na.
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Nd - Na = 5 X 1015 to 1 x 1019 / cm3
Nd = Number density of electron donors
Na = Number density of electron acceptors (holes)
Nd - Na = Net Carrier Concentration
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Resistivity
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0.06 +/- 0.02 Ohm-cm
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Micro-pipe Density.
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~200 / cm2
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Polish
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One side (Si-face) polished, back side Carbon face
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Band Gap
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2.93 eV (Indirect)
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Dielectric Constant
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ƒÃ(11) = ƒÃ(22) = 9.66, ƒÃ(33) = 10.33
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Thermal Conductivity at 300K
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5 W / cm.K
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Growth method
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Seeded Crystal –
Vapor Phase Transport
Modified Lally Process
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Size
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Up to 4 inch
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Crystal Type
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4H-SiC
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Unit cell and constant
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Hexagonal
a = 3.076 Angstrom
c = 10.053 Angstrom
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Stacking sequence
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ABAC ( 4H )
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on axis (0001)
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+/- 0.5°
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Type
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N - type
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Polish
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One side (Si-face) polished
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Size
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Up to 4”
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|
 Up
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